Tunable spin-orbit coupling in two-dimensional InSe

Ceferino, A; Magorrian, S J; Zólyomi, V; Bandurin, D A; Geim, A K; Patanè, A; Kovalyuk, Z D; Kudrynskyi, Z R; Grigorieva, I V; Fal'Ko, V I

Abstract

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer γ-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid k · p tight-binding model, fully parameterized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.

Citation

Ceferino, A., Magorrian, S. J., Zólyomi, V., Bandurin, D. A., Geim, A. K., Patanè, A., Kovalyuk, Z. D., Kudrynskyi, Z. R., Grigorieva, I. V., & Fal'Ko, V. I. (2021). Tunable spin-orbit coupling in two-dimensional InSe. Physical Review B, 104(12), Article 125432. https://doi.org/10.1103/PhysRevB.104.125432

• Journal Article Type: Article
• Acceptance Date: Jun 30, 2021
• Online Publication Date: Sep 22, 2021
• Publication Date: Sep 15, 2021
• Deposit Date: Aug 5, 2021
• Publicly Available Date: Sep 15, 2021
• Journal: Physical Review B
• Print ISSN: 2469-9950
• Electronic ISSN: 2469-9969
• Publisher: American Physical Society
• Peer Reviewed: Peer Reviewed
• Volume: 104
• Issue: 12
• Article Number: 125432
• DOI: https://doi.org/10.1103/PhysRevB.104.125432
• Public URL: https://nottingham-repository.worktribe.com/output/5956164
• Publisher URL: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.104.125432
• Additional Information: ©2021 American Physical Society